GaN-on-SiC for satellite tv for pc beam steering antennas
A European project is building a highly efficient antenna receiver for space systems using gallium nitride on a silicon carbide substrate.
The Kassiopeia project brings together the University of Bristol in Great Britain, the Ferdinand Braun Institute (FBH) in Germany and SweGaN in Sweden to develop a Ka-band MMIC (Monolithic Microwave Integrated Circuit) receiver.
The MMIC uses SweGaN’s QuanFINE GaN-on-SiC epitaxial materials to increase device efficiency for beam steering antennas for satellite communications, 5G base stations and radar applications.
The project is led and coordinated by FBH to develop and demonstrate Ka-band MMICs using novel epitaxy, processing and circuit concepts for high-efficiency GaN and AlN devices. FBH uses its iridium sputter gate technology, which reduces dynamic losses (gate lagging) by half and halves device reliability, which is especially important for space-based devices. In addition, FBH has one of the best equipped laboratories in Europe.
SweGaN brings its buffer-free solution for GaN-on-SiC epi-wafers, QuanFINE, and brings its expertise in the design and optimization of epitaxial layers to the project. SweGaN will also supply semi-insulating SiC substrates developed in-house for evaluation. The epiwafer specialist currently supplies epitaxial material to leading manufacturers of components and devices for satellite communications, telecommunications and defense, as well as power electronics for electric vehicles, solar inverters and more.
“We are pleased to be working with the renowned GaN research groups in Europe, FBH and Uni. Of Bristol, on this ESA-oriented project,” said Jr-Tai Chen, CTO of SweGaN Processes for GaN-on-SiC epiwafer Increase in innovation at the material level for Ka-band components. “
“The strategic development project uses our combined know-how and will further improve SweGaN’s long-term market strategy and product innovation – and offer our global customer base considerable advantages,” said Dr. Chen.
“We are excited to work with SweGaN and FBH to understand, optimize and leverage the improved thermal management potential of buffer-free GaN-on-SiC for transistor applications and to apply our unique expertise in evaluating heat transfer in semiconductor devices,” said Professor Martin Kuball, Royal Academy of Engineering Chair in Emerging Technologies at the University of Bristol. Bristol University research specializes in direct thermal measurements on active GaN transistors using micro-Raman thermography and advanced device characterizations and models.
www.swegan.se; www.fbh-berlin.de/de; www.bristol.ac.uk
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