Generalized Class E energy amplifier with shunt capacitance and shunt filter

Manufacturing, packaging & materials

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Unique design flexibility that can either extend the maximum operating frequency of a power amplifier or allow the use of larger active devices with higher power handling capabilities.

This article presents a generalized analysis of the Class E Power Amplifier (PA) with Shunt Capacitance and Shunt Filter, resulting in unique design flexibility that can either be used to extend the maximum operating frequency of the PA or to enable its use larger active devices with higher resilience. The proposed PA fulfills the conditions of zero voltage switching (ZVS) and zero voltage discharge switching (ZVDS), which leads to a theoretical DC / RF efficiency of 100%. Explicit design equations for the load network parameters are derived and the analysis results are confirmed by simulations of the harmonic compensation. Two PA prototypes were constructed, one designed for low frequencies and the other for high frequencies. The first PA to use a MOSFET and lumped element load network delivered a peak-drain efficiency (DE) of 93.3% and a maximum output power of 37 dBm at 1 MHz. The second PA, which uses a GaN HEMT and a Transmission Line Load Network (TL Load Network) to provide the drain of the transistor with the necessary load impedances at the fundamental frequency as well as even and odd harmonic frequencies, provided a peak DE of 90.2% and a peak output power of 39.8 dBm at 1.37 GHz.

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Authors:

Moïse Safari Mugisho, PhD student, IEEE, Denis G. Makarov, Julia V. Rassokhina, IEEE, Vladimir G. Krizhanovski, Senior, IEEE, Andrei Grebennikov, Senior, IEEE and Mury Thian

KNOWLEDGE The authors would like to thank Wolfspeed for providing the GaN power device.

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